Multi-bit nonvolatile memory devices including nano-crystals...

Details Multi-bit nonvolatile memory devices including nano-crystals... Multi-bit nonvolatile memory devices including nano-crystals...

2006-07-18

2010-06-08

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257S320000, C257S318000, C257S366000, C257S387000, C257SE29134, C257SE29138

Reexamination Certificate

active

07732853

ABSTRACT:
Nonvolatile integrated circuit memory devices having a 2-bit memory cell include a substrate, a source region and a drain region in the substrate, a step recess channel between the source region and the drain region, a trapping structure including a plurality of charge trapping nano-crystals on the step recess channel, and a gate on the trapping structure. Related fabrication methods are also described.

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patent: 2002-0038274 (2003-05-01), None

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