Multi-bit nonvolatile memory devices and methods of...

Details Multi-bit nonvolatile memory devices and methods of... Multi-bit nonvolatile memory devices and methods of...

2006-01-20

2009-12-29

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C365S185030, C365S185280, C977S938000, C977S943000

Reexamination Certificate

active

07639524

ABSTRACT:
A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.

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Chen et al. “Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAIO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance,” Nov. 2004. IEEE Transactions on Electron Devices, vol. 51, No. 11. pp. 1840-1848.
Martel et al. “Single- and Multi-wall Carbon Nanotube Field-Effect Transistors,” Oct. 1998. Applied Physics Letters vol. 73, No. 17. pp. 2447-2449.
Chinese First Office Action dated Jul. 4, 2008, for corresponding Chinese Patent Application No. 2006100048716.

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