Multi-bit non-volatile memory devices and methods of...

Details Multi-bit non-volatile memory devices and methods of... Multi-bit non-volatile memory devices and methods of...

2006-09-19

2010-11-30

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

07842995

ABSTRACT:
A multi-bit non-volatile memory device may include a semiconductor substrate including a body and at least one pair of fins protruding above the body. A first insulation layer may be formed on the body between the at least one pair of fins. A plurality of pairs of control gate electrodes may extend across the first insulation layer and the at least one pair of fins, and may at least partly cover upper portions of outer walls of the at least one pair of fins. A plurality of storage nodes may be formed between the control gate electrodes and the at least one pair of fins, and may be insulated from the substrate. A first distance between adjacent pairs of control gate electrodes may be greater than a second distance between control gate electrodes in each pair.

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European Search Report dated Jan. 14, 2009 for corresponding European Application No. 06126309.1-1235/1801857.
Chinese Office Action and English translation May 8, 2009.

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