Multi-bit memory unit and fabrication method thereof

Details Multi-bit memory unit and fabrication method thereof Multi-bit memory unit and fabrication method thereof

2005-02-22

2005-02-22

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S270000, C438S272000

Reexamination Certificate

active

06858495

ABSTRACT:
A multi-bit memory unit and fabrication method thereof. A semiconductor substrate forming a protruding semiconductor substrate is provided, an ion implantation region is formed on the semiconductor substrate beside the protruding semiconductor substrate, a spacer is formed on a sidewall of the protruding semiconductor substrate, a doped region is formed on the semiconductor substrate, and an ONO layer is conformally formed on the surface of the protruding semiconductor substrate, the spacer, the doped region, and the semiconductor substrate.

REFERENCES:
patent: 5616510 (1997-04-01), Wong
patent: 6043122 (2000-03-01), Liu et al.

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