MSM binary switch memory

Details MSM binary switch memory MSM binary switch memory

2007-09-15

2009-10-27

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S068000, C438S296000, C257SE21304, C257SE21645, C257SE21646, C257SE21657, C257SE21659, C257SE27004, C257SE27071

Reexamination Certificate

active

07608514

ABSTRACT:
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top electrode, a semiconductor layer overlies the MSM bottom electrode, and an MSM top electrode overlies the semiconductor layer. The MSM bottom electrode can be a material such as Pt, Ir, Au, Ag, TiN, or Ti. The MSM top electrode can be a material such as Pt, Ir, Au, TiN, Ti, or Al. The semiconductor layer can be amorphous Si, ZnO2, or InO2.

REFERENCES:
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6914810 (2005-07-01), Hosotani
patent: 7271081 (2007-09-01), Li et al.
patent: 7303971 (2007-12-01), Hsu et al.
patent: 7446010 (2008-11-01), Li et al.

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