Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S204000, C365S207000, C365S210130
Reexamination Certificate
active
07038959
ABSTRACT:
A sense amplifier (11) and method for sensing a MRAM cell (77) is provided. The sense amplifier (11) includes a precharge circuit (13′) having an operational amplifier (40, 42) that uses a voltage divider (115, 116) in a feedback path to control the amount of charge stored on a capacitor (104, 105). During a precharge portion of a read operation, the charge stored on the capacitor (104, 105) is used to precharge the sense amplifier (11). By using charge sharing to precharge the sense amplifier (11), the sense amplifier (11) can be precharged to a steady state common mode voltage more quickly, thus decreasing time required for a read operation.
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Freescale Semiconductor Inc.
Hill Daniel O.
Nguyen Van Thu
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