MRAM MTJ stack to conductive line alignment method

Details MRAM MTJ stack to conductive line alignment method MRAM MTJ stack to conductive line alignment method

2005-02-22

2005-02-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S633000, C438S975000

Reexamination Certificate

active

06858441

ABSTRACT:
A method of manufacturing a resistive semiconductor memory device (100), comprising depositing an insulating layer (132) over a workpiece (30), and defining a pattern for a plurality of alignment marks (128) and a plurality of conductive lines (112) within the insulating layer (132). A conductive material is deposited over the wafer to fill the alignment mark (128) and conductive line (112) patterns. The insulating layer (132) top surface is chemically-mechanically polished to remove excess conductive material from the insulating layer (132) and form conductive lines (112), while leaving conductive material remaining within the alignment marks (128). A masking layer (140) is formed over the conductive lines (112), and at least a portion of the conductive material is removed from within the alignment marks (128). The alignment marks (128) are used for alignment of subsequently deposited layers of the resistive memory device (100).

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