MRAM arrays and methods for writing and reading magnetic...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S158000, C365S173000, C365S205000

Reexamination Certificate

active

07154798

ABSTRACT:
A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

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