MRAM array employing spin-filtering element connected by...

Details MRAM array employing spin-filtering element connected by... MRAM array employing spin-filtering element connected by...

2008-01-29

2008-01-29

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S422000

Reexamination Certificate

active

10791911

ABSTRACT:
An MRAM array having enhanced magnetoresistance includes a spin filtering element connected by a spin hold element to the MRAM cell structures. A spin filtering element may serve several MRAM cell structures, by connecting the spin filtering element to a series of MRAM cell structures by a spin hold wire, or a spin filtering element and a spin hold element may be formed as adjacent layers in each MRAM cell stack.

REFERENCES:
patent: 5792569 (1998-08-01), Sun et al.
patent: 5801984 (1998-09-01), Parkin
Moon-Ho Jo et al., “Very Large Magnetoresistance and Coherent Switching in Half-Metallic Manganite Tunnel Junctions,” The American Physical Society, vol. 61, No. 22:R14 905-R14 908 (Jun. 1, 2000).

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