Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
06888743
ABSTRACT:
An MRAM architecture is provided that reduces the number of isolation transistors. The MRAM architecture includes magnetoresistive memory cells that are electrically coupled to form a ganged memory cell. The magnetoresistive memory cells of the ganged memory cell are formed with Magnetic Tunnel Junctions (MTJs) and formed without isolation devices, such as isolation transistors, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells. Preferably, the magnetoresistive memory cells of the ganged memory cell only include MTJs, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells.
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Andre Thomas W.
Butcher Brian R.
Deherrera Mark F.
Durlam Mark A.
Engel Bradley N.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
Nguyen Tan T.
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