MRAM architecture and a method and system for fabricating...

Details MRAM architecture and a method and system for fabricating... MRAM architecture and a method and system for fabricating...

2006-06-27

2006-06-27

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07067866

ABSTRACT:
A method and system for providing magnetic memory cells in a magnetic memory is disclosed. The method and system include providing each magnetic memory element, providing a first write line and a second write line for each magnetic memory element. The magnetic memory element has a top portion and a bottom portion. The first write line is below the magnetic memory element and is electrically connected with the bottom portion of the magnetic memory element. The second write line is above the magnetic memory element. The second write line is electrically isolated from the magnetic memory element and oriented at an angle to the first write line. The magnetic memory cell allows for a simplified fabrication process, a reduced cell size, and an improved programming efficiency.

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