MRAM and methods for manufacturing and driving the same

Details MRAM and methods for manufacturing and driving the same MRAM and methods for manufacturing and driving the same

2006-02-21

2006-02-21

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S179000

Reexamination Certificate

active

07002841

ABSTRACT:
An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed. The MRAM includes a semiconductor substrate having a bipolar junction transistor (BJT) formed thereon, a bit line coupled to an emitter of the BJT, an MTJ layer coupled to the BJT, a word line coupled to the MTJ layer, a plate line coupled to the BJT so as to be spaced apart from the MTJ layer, and an interlayer dielectric formed between components of the MRAM, wherein the MTJ layer is coupled to a base and a collector of the BJT, the plate line is coupled to the collector, and an amplifying unit for amplifying a signal while data is read out from the MTJ layer is coupled to the bit line, thereby allowing precise reading of the data.

REFERENCES:
patent: 5068826 (1991-11-01), Matthews
patent: 6657270 (2003-12-01), Kim et al.
patent: 6664579 (2003-12-01), Kim et al.

Affiliated with

Also associated with

Rating

MRAM and methods for manufacturing and driving the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MRAM and methods for manufacturing and driving the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM and methods for manufacturing and driving the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3671410