MOSFET with short channel structure and formation method...

Details MOSFET with short channel structure and formation method... MOSFET with short channel structure and formation method...

2006-06-13

2006-06-13

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S290000, C438S291000

Reexamination Certificate

active

07060572

ABSTRACT:
A MOSFET with a short channel structure and manufacturing processes for the same are described. The MOSFET has a substrate, a channel region, a source/drain region, a gate dielectric layer and a conductive layer. The channel region in the substrate includes a first region and a second region, in which the first region has a first threshold voltage and the second region has a second threshold voltage, respectively. The first threshold voltage is smaller than the second threshold voltage. The first threshold voltage of the first region can also be adjusted to reduce or increase effectively the resistance of the MOSFET when the MOSFET is turned on or off. Additionally, the first region has a shallower junction depth than that of the normal source/drain extension.

REFERENCES:
patent: 5856225 (1999-01-01), Lee et al.
patent: 6607958 (2003-08-01), Suguro

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