Mosfet with raised source and drain regions

Details Mosfet with raised source and drain regions Mosfet with raised source and drain regions

1997-06-09

2000-05-16

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, H01L 21336

Patent

active

060636769

ABSTRACT:
A semiconductor substrate having a surface, a field oxide region at the surface and a gate structure above the surface are provided. A sidewall spacer is formed adjacent to the gate structure and a polysilicon layer is formed above the substrate, the polysilicon layer having raised first and second portions above the gate structure and field oxide region, respectively. A masking layer is formed above the polysilicon layer and then blanket etched to expose the raised first and second portions of the polysilicon layer which are subsequently removed to form a raised source/drain region from the polysilicon layer. Since the raised source/drain region is fabricated without using photolithography, high density MOSFETs are readily fabricated.

REFERENCES:
patent: 4016587 (1977-04-01), De La Moneda
patent: 4072545 (1978-02-01), De La Moneda
patent: 4841347 (1989-06-01), Hsu
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5182619 (1993-01-01), Pfiester
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5340758 (1994-08-01), Wei et al.
patent: 5371026 (1994-12-01), Hayden et al.
patent: 5376578 (1994-12-01), Hsu et al.
patent: 5418173 (1995-05-01), Lee et al.
patent: 5504031 (1996-04-01), Hsu et al.
patent: 5654240 (1997-08-01), Lee et al.
patent: 5683924 (1997-11-01), Chan et al.
patent: 5691212 (1997-11-01), Tsai et al.
patent: 5736419 (1998-04-01), Naem
patent: 5773358 (1998-06-01), Wu et al.
patent: 5777920 (1998-07-01), Ishigaki et al.
patent: 5804472 (1998-09-01), Balasinski et al.

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