MOSFET with asymmetrical extension implant

Details MOSFET with asymmetrical extension implant MOSFET with asymmetrical extension implant

2008-05-15

2010-11-09

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S311000, C438S931000, C257SE21092, C257SE21320, C257SE21400, C257SE21127, C257SE21248, C257SE21421

Reexamination Certificate

active

07829401

ABSTRACT:
A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

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