MOSFET with a second poly and an inter-poly dielectric layer...

Details MOSFET with a second poly and an inter-poly dielectric layer... MOSFET with a second poly and an inter-poly dielectric layer...

2011-06-14

2011-06-14

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C257S301000, C257S329000, C257S331000, C257SE27016, C257SE27060

Reexamination Certificate

active

07960233

ABSTRACT:
This invention discloses a new trenched vertical semiconductor power device that includes a capacitor formed between a conductive layer covering over an inter-dielectric layer disposed on top of a trenched gate. In a specific embodiment, the trenched vertical semiconductor power device may be a trenched metal oxide semiconductor field effect transistor (MOSFET) power device. The trenched gate is a trenched polysilicon gate and the conductive layer is a second polysilicon layer covering an inter-poly dielectric layer disposed on top of the trenched polysilicon gate. The conductive layer is further connected to a source of the vertical power device.

REFERENCES:
patent: 2002/0137291 (2002-09-01), Zandt In't et al.

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