MOSFET performance improvement using deformation in SOI...

Details MOSFET performance improvement using deformation in SOI... MOSFET performance improvement using deformation in SOI...

2005-05-03

2005-05-03

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S153000, C438S440000

Reexamination Certificate

active

06887751

ABSTRACT:
A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor layer on a substrate. The first region of the substrate is expanded to push up the first portion of the semiconductor layer, thereby applying tensile stress to the first portion. The second region of the substrate is compressed to pull down the second portion of the semiconductor layer, thereby applying compressive stress to the second portion. An N type device is formed over the first portion of the semiconductor layer, and a P type device is formed over the second portion of the semiconductor layer.

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