Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-11
2008-03-11
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S676000, C257S693000, C257S776000, C438S123000, C438S197000, C361S773000, C361S813000
Reexamination Certificate
active
07342267
ABSTRACT:
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
REFERENCES:
patent: 3849187 (1974-11-01), Fetscher et al.
patent: 4927505 (1990-05-01), Sharma et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5053851 (1991-10-01), Brendlmaier et al.
patent: 5134460 (1992-07-01), Brady et al.
patent: 5489803 (1996-02-01), Kanbe et al.
patent: 5532512 (1996-07-01), Fillion et al.
patent: 5814884 (1998-09-01), Davis et al.
patent: 6040626 (2000-03-01), Cheah et al.
patent: 6077727 (2000-06-01), Osawa et al.
patent: 6084310 (2000-07-01), Mizuno et al.
patent: 6249041 (2001-06-01), Kasem et al.
patent: 6288905 (2001-09-01), Chung
patent: 6423623 (2002-07-01), Bencuya et al.
patent: 6744124 (2004-06-01), Chang et al.
patent: 6774466 (2004-08-01), Kajiwara et al.
patent: 57-103342 (1982-06-01), None
patent: 1-266752 (1989-10-01), None
patent: 02-281737 (1990-11-01), None
patent: 2-310956 (1990-12-01), None
patent: 04-004764 (1992-01-01), None
patent: 5-121615 (1993-05-01), None
patent: 05-343578 (1993-12-01), None
patent: 06-291223 (1994-10-01), None
patent: 07-078900 (1995-03-01), None
patent: 8-064634 (1996-03-01), None
patent: 09-129798 (1997-05-01), None
patent: 11-054673 (1999-02-01), None
Hata Toshiyuki
Hirashima Toshinori
Ishii Shigeru
Kajiwara Ryoichi
Kishimoto Munehisa
Antonelli, Terry Stout & Kraus, LLP.
Chambliss Alonzo
Hitachi Tohbu Semiconductor, Ltd.
Renesas Technology Corp.
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