Solderable top metal for SiC device

Details Solderable top metal for SiC device Solderable top metal for SiC device

2008-07-01

2008-07-01

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

07394158

ABSTRACT:
A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.

REFERENCES:
patent: 5047833 (1991-09-01), Gould
patent: 2005/0200011 (2005-09-01), Standing et al.
patent: 2006/0220027 (2006-10-01), Takahashi et al.
International Search Report for PCT/US05/38118 dated Feb. 6, 2007.

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