MOSFET on SOI substrate

Details MOSFET on SOI substrate MOSFET on SOI substrate

1995-11-15

1997-04-22

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, H01L 2701, H01L 2712

Patent

active

056231555

ABSTRACT:
A MOSFET is provided in the body silicon layer of an SOI substrate, for example as a mesa. A source region, a channel region, and a drain region are present. A gate electrode having a portion as a ridge on this channel region is also provided. For electrical connection of the channel region, a highly doped, preferably laterally arranged channel terminal region that is electrically conductively connected to the channel region and that has a contact applied thereon.

REFERENCES:
patent: 5293052 (1994-03-01), Cherne et al.
patent: 5446301 (1995-08-01), Eguchi et al.
Elimination of Bipolar-Induced Breakdown in Fully-Depleted SOI MOSFETs-Eric P. Ver Ploeg et al. 1992 IEEE IEDM 92-337-340.

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