MOSFET having recessed channel

Details MOSFET having recessed channel MOSFET having recessed channel

2011-08-09

2011-08-09

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S369000, C257SE29260, C257SE29257, C438S270000, C438S574000, C438S589000, C438S596000

Reexamination Certificate

active

07994572

ABSTRACT:
A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a semiconductor substrate is greater than the CD of the gate electrode disposed on the semiconductor substrate. As a result, the misalignment margin for a photolithographic process used to form the gate electrodes can be increased, and both overlap capacitance and gate induced drain leakage (GIDL) can be reduced.

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