MOSFET-fused nonvolatile read-only memory cell (MOFROM)

Details MOSFET-fused nonvolatile read-only memory cell (MOFROM) MOSFET-fused nonvolatile read-only memory cell (MOFROM)

2005-09-27

2005-09-27

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S130000, C438S211000, C438S257000, C438S470000, C257S048000, C257S390000, C257S391000, C257S497000, C257S498000

Reexamination Certificate

active

06949423

ABSTRACT:
With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.

REFERENCES:
patent: 5471422 (1995-11-01), Chang et al.
patent: 5751635 (1998-05-01), Wong et al.
patent: 6229733 (2001-05-01), Male
patent: 6404675 (2002-06-01), Banks
patent: 6680227 (2004-01-01), Kuo et al.
patent: 6788584 (2004-09-01), Tedrow et al.

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