MOSFET devices and methods of making

Details MOSFET devices and methods of making MOSFET devices and methods of making

2009-02-10

2010-11-09

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S510000, C438S514000, C257SE21170, C257SE21051, C257SE21058, C257SE21227, C257SE21247, C257SE21248, C257SE21421

Reexamination Certificate

active

07829402

ABSTRACT:
A MOSFET device and a method for fabricating MOSFET devices are disclosed. The method includes providing a semiconductor device structure including a semiconductor device layer of a first conductivity type, and ion implanting a well structure of a second conductivity type in the semiconductor device layer, where the ion implanting includes providing a dopant concentration profile in a single mask implant sequence.

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Asmita Saha and James A. Cooper; A 1-kV 4H-SiC Power DMOSFET Optimized for Low ON-Resistance; IEEE Transactions on Electron Devices; Oct. 2007; pp. 2786-2791; vol. 54, No. 10.

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