MOSFET devices and methods for making them

Details MOSFET devices and methods for making them MOSFET devices and methods for making them

2008-09-18

2010-10-12

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S408000, C257S413000, C257SE29154, C257SE29165, C257SE21623, C257SE21625, C257SE21632, C257SE21634, C257SE21636, C257SE21637, C257SE21639, C438S216000, C438S287000, C438S301000, C438S591000, C438S682000

Reexamination Certificate

active

07812413

ABSTRACT:
A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.

REFERENCES:
patent: 2004/0191997 (2004-09-01), Kawahara et al.
patent: 2005/0048728 (2005-03-01), Kawahara
patent: 2009/0152636 (2009-06-01), Chudzik et al.
patent: 2009/0152650 (2009-06-01), Chudzik et al.
patent: 2009/0263961 (2009-10-01), Kher
patent: 1179837 (2002-02-01), None
Nadia Lifshitz. Dependence of the Work-Function Difference Between the Polysilicon Gate and Silicon Substrate on the Doping Level in Polysilicon. Mar. 1985. IEEE Transactions on Electron Devices. vol. 32, No. 3. pp. 617-621.
Shiino et al. La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing. ECS Trans. 3, 511 (2006).
European Search Report Application No. 08156018 dated Nov. 4, 2008.

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