Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-01-30
1998-07-14
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
H01L 21331, H01L 218222
Patent
active
057803501
ABSTRACT:
LDD regions of a MOSFET device in an integrated circuit structure are formed in a semiconductor substrate, after formation of the source/drain regions of the MOSFET device by forming spacers on the sidewalls of the gate electrode prior to doping of the substrate to form source/drain regions by implantation and annealing/activating. The sidewall spacers are then removed, and the portion of the substrate exposed by removal of the spacers is then lightly doped to form the desired LDD regions in the substrate between the respective source/drain regions and a channel region of the substrate below the gate oxide. In this manner, the dopant used to form the LDD regions is not exposed to the heat used to anneal and activate the implanted source/drain regions. In a preferred embodiment, where the semiconductor substrate is a silicon substrate and the gate electrode is a polysilicon gate electrode, metal silicide contacts are also formed, respectively over the source/drain regions and the polysilicon gate electrode, prior to removal of the spacers and prior to the formation of the LDD regions, so that the dopant used to form the LDD regions is also not exposed to the heat used to form the metal silicide contacts.
REFERENCES:
patent: 5320974 (1994-06-01), Hori et al.
patent: 5389557 (1995-02-01), Jung-Suk
patent: 5491099 (1996-02-01), Hsu
Booth Richard A.
LSI Logic Corporation
Niebling John
Taylor John P.
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