MOS transistor with ramped gate oxide thickness and method for m

Details MOS transistor with ramped gate oxide thickness and method for m MOS transistor with ramped gate oxide thickness and method for m

1996-12-17

1998-04-21

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438981, H01L 21336

Patent

active

057417377

ABSTRACT:
The invention relates to a transistor having a ramped gate oxide thickness, a semiconductor device containing the same and a method for making a transistor.

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