Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-12-04
2007-12-04
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S254000, C257S416000, C257S417000, C257S418000, C257S419000, C257S420000, C257S522000, C257S599000, C257SE29324
Reexamination Certificate
active
11227624
ABSTRACT:
A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.
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Abele Nicolas
Ancey Pascal
Casset Fabrice
Commissariat a l''Energie Atomique
Cruz Leslie Pilar
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
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