MOS transistor temperature detecting circuit

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307231, 307571, 374185, H01L 3100, H03K 326

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active

050952277

ABSTRACT:
A semiconductor temperature detecting circuit is provided having a plurality of pairs of a MOS transistor for supplying current and a polycrystalline silicon resistor connected in series thereto. Each such pair is connected in between a first and a second power supply line. The voltage across the terminals of each polycrystalline silicon resistor is converted to a digital logic value and the combination of all such digital outputs represents the detected temperature. Each current supply transistor has its gate electrode connected to a common circuit which sets the current supply. The current setting circuit includes two p-channel MOS transistors and two n-channel MOS transistors. Each p-channel transistor in the current setting circuit has a current electrode connected to one power supply line and another current electrode connected to a current electrode of a corresponding n-channel transistor. Each n-channel transistor has its other current electrode connected to the other power supply line. One of the p-channel transistors has its gate electrode connected to a common point between one of its current electrode and a corresponding n-channel transistor, and the circuit output is taken from that gate electrode. The other p-channel transistor has its gate electrode connected to the power supply line connected to the n-channel transistors, and its current electrode connecting to a corresponding n-channel transistor is also commonly connected to the gate electrode of the two n-channel transistors.

REFERENCES:
patent: 4034395 (1977-07-01), Abdelrahman
patent: 4047436 (1977-09-01), Bernard et al.
patent: 4281544 (1981-08-01), Kaneko
patent: 4504743 (1985-03-01), Aoyama et al.
patent: 4652144 (1987-03-01), Gunther et al.
patent: 4699520 (1987-10-01), Wallenfang
patent: 4762801 (1988-08-01), Kapoor
patent: 4808847 (1989-02-01), Van Kessel
Jaeger et al., "Integrated MOS Temperature Sensor", IEE Conference: Nashville, Tenn., Apr. 1980, pp. 161-162.

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