Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-27
2007-11-27
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S770000, C438S981000, C257SE21625
Reexamination Certificate
active
11317687
ABSTRACT:
It is an object to provide an SOI device capable of carrying out body fixation and implementing a quick and stable operation. A gate insulating film (11) having a thickness of 1 to 5 nm is provided between a portion other than a gate contact pad (GP) of a gate electrode (12) and an SOI layer (3), and a gate insulating film (110) having a thickness of 5 to 15 nm is provided between the gate contact pad (GP) and the SOI layer (3). The gate insulating film (11) and the gate insulating film (110) are provided continuously.
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Ipposhi Takashi
Iwamatsu Toshiaki
Maeda Shigenobu
Matsumoto Takuji
Renesas Technology Corp.
Smoot Stephen W.
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