MOS transistor manufacturing

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S198000, C438S290000, C438S297000, C438S298000, C438S300000, C257SE21177, C257SE21430, C257SE21431, C257SE21432

Reexamination Certificate

active

07915110

ABSTRACT:
A MOS transistor made in monolithic form, vias contacting the gate and the source and drain regions of the transistor being formed on the other side of the channel region with respect to the gate.

REFERENCES:
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patent: 6114768 (2000-09-01), Gaul et al.
patent: 6335214 (2002-01-01), Fung
patent: 6838332 (2005-01-01), Sanchez et al.
patent: 7176116 (2007-02-01), Cabral et al.
patent: 7241700 (2007-07-01), En et al.
patent: 2002/0045307 (2002-04-01), Kittl et al.
patent: 2003/0064553 (2003-04-01), Iashi
patent: 2005/0042867 (2005-02-01), Sanchez et al.
patent: 2007/0232003 (2007-10-01), Loo et al.
patent: 2007/0293056 (2007-12-01), Setsuhara et al.
patent: 2008/0318385 (2008-12-01), Kavalieros et al.
French Search Report, dated Aug. 9, 2006, from corresponding French Application No. 05/53615 filed Nov. 28, 2005.

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