Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S198000, C438S290000, C438S297000, C438S298000, C438S300000, C257SE21177, C257SE21430, C257SE21431, C257SE21432
Reexamination Certificate
active
07915110
ABSTRACT:
A MOS transistor made in monolithic form, vias contacting the gate and the source and drain regions of the transistor being formed on the other side of the channel region with respect to the gate.
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Benouillet-Beranger Claire
Coronel Philippe
Gallon Claire
Ahmadi Mohsen
Commissariat à l'Energie Atomique
Garber Charles D
Jorgenson Lisa K.
Morris James H.
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