Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000, C257S412000, C257S288000
Reexamination Certificate
active
07012313
ABSTRACT:
A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The MOS transistor can be used in a DRAM, particularly as a selection transistor.
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Heineck Lars-Peter
Schweeger Giorgio
Flynn Nathan J.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Mondt Johannes
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