MOS transistor forming method

Details MOS transistor forming method MOS transistor forming method

2006-02-09

2008-08-26

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S513000

Reexamination Certificate

active

07416950

ABSTRACT:
A method for forming, in a single-crystal semiconductor substrate of a first conductivity type, doped surface regions of the second conductivity type and deeper doped regions of the first conductivity type underlying the surface regions, including the step of negatively biasing the substrate placed in the vicinity of a plasma including, in the form of cations dopants of the first conductivity type and dopants of a second conductivity type, the dopants of the second conductivity type having an atomic mass which is greater than that of the dopants of the first conductivity type.

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