MOS transistor and method of manufacturing the same

Details MOS transistor and method of manufacturing the same MOS transistor and method of manufacturing the same

2005-11-01

2005-11-01

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S272000, C438S283000, C438S296000

Reexamination Certificate

active

06960508

ABSTRACT:
An object of the present invention is to provide a MOS transistor of a new structure and a method of manufacturing the same that is capable of easily fabricating a high integration density device by overcoming photolithography limitations. The object of the present invention is accomplished by a MOS transistor, including a semiconductor substrate having a projection in which the width of an upper portion thereof is larger than that of a lower portion thereof; an isolating layer formed in the middle of substrate of the projection; first and second drain regions formed within the surface of the substrate of the projection; first and second source regions formed within the surface of the substrate on both sides of the projection; a gate insulating layer formed on the entire surface of the substrate; and first and second gates formed on the gate insulating layer on both sides of the substrate of the projection.

REFERENCES:
patent: 5719067 (1998-02-01), Gardner et al.
patent: 5888868 (1999-03-01), Yamazaki et al.
patent: 5940707 (1999-08-01), Gardner et al.
patent: 6501129 (2002-12-01), Osawa
patent: 6548856 (2003-04-01), Lin et al.
patent: 6635924 (2003-10-01), Hergenrother et al.
patent: 2001/0024858 (2001-09-01), Schulz et al.
patent: 2002/0158287 (2002-10-01), Fujishima et al.
patent: 2005/0029575 (2005-02-01), Chu et al.

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