MOS transistor and fabrication process for the same

Details MOS transistor and fabrication process for the same MOS transistor and fabrication process for the same

1997-04-15

1999-12-14

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 21336

Patent

active

060016981

ABSTRACT:
Disclosed is a MOS transistor and a fabrication process for the MOS transistor. Each gate electrode pattern made of silicon is formed on a gate oxide film formed on a silicon base body. An impurity is doped in the silicon base body using the gate electrode patterns as a mask, followed by activation of the impurity thus doped, to form diffusion layers in a surface layer of the silicon base body. An interlayer insulating film is formed in such a manner as to cover the gate electrode patterns. An upper portion of the interlayer insulating film is removed to expose the upper portion of each gate electrode pattern. The gate electrode pattern thus exposed is removed by selective etching. After that, a recessed portion formed by removal of each gate electrode pattern is embedded with a metal material, to form a CMOS transistor.

REFERENCES:
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5576574 (1996-11-01), Hong
patent: 5670401 (1997-09-01), Tseng
patent: 5674774 (1997-10-01), Pasch et al.
patent: 5688700 (1997-11-01), Kao et al.
patent: 5731239 (1998-03-01), Wong et al.
patent: 5780349 (1998-07-01), Naem
patent: 5786256 (1998-07-01), Gardner et al.

Affiliated with

Also associated with

Rating

MOS transistor and fabrication process for the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor and fabrication process for the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor and fabrication process for the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-862774