MOS transistor and fabrication method thereof

Details MOS transistor and fabrication method thereof MOS transistor and fabrication method thereof

2006-11-14

2006-11-14

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S305000

Reexamination Certificate

active

07135374

ABSTRACT:
A method of forming a MOS transistor is disclosed. An example method forms an insulating film and a first silicon layer on a semiconductor substrate in order. The example method forms an impurity region by injecting impurity ions into a predetermined region of the first silicon layer, forms a common source line by forming a second silicon layer on the impurity region, and then injecting impurity ions into the second silicon layer. The example method also forms a gate oxide over whole surfaces of the first silicon layer and the common source line, forms side walls made of insulating film on the gate oxide film positioned at sides of the common source line, forms drain regions by injecting impurity ions into the first silicon layer being positioned at a predetermined distance from the common source line, and forms gate electrodes on sides of the side walls.

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Office Action issued by the Korean Patent Office for Korean Application No. 10-2003-0047267 and an English translation, Feb. 24, 2005, 2 pages.

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