MOS TEG structure

Details MOS TEG structure MOS TEG structure

1997-09-18

1999-09-07

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

324765, H01L 2358, G01R 3126

Patent

active

059490900

ABSTRACT:
A semiconductor integrated circuit includes a rectangular semiconductor chip having a main surface, a plurality of pads formed in a peripheral portion of the main surface of the semiconductor chip, for connection to external connecting members, a plurality of circuit elements of an integrated circuit formed in an area of the main surface other than an area in which the plurality of pads are formed, and at least one characteristic evaluating circuit element connected to at least one of the plurality of circuit elements of the integrated circuit by sharing an impurity doped region which forms part of the at least one circuit element with the at least one circuit element of the integrated circuit in an area of the main surface other than the peripheral portion in which the plurality of pads are formed.

REFERENCES:
patent: 4931844 (1990-06-01), Zommer
patent: 5250823 (1993-10-01), Veendrick et al.

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