MOS structures with remote contacts and methods for...

Details MOS structures with remote contacts and methods for... MOS structures with remote contacts and methods for...

2011-08-02

2011-08-02

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07989891

ABSTRACT:
MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.

REFERENCES:
patent: 6141255 (2000-10-01), Sunkavalli
patent: 6486515 (2002-11-01), Jun et al.
patent: 7285477 (2007-10-01), Bernstein et al.
patent: 2006/0228862 (2006-10-01), Anderson et al.
patent: 2007/0210385 (2007-09-01), Ker et al.
patent: 2007/0235823 (2007-10-01), Hsu et al.
patent: 2008/0197411 (2008-08-01), Korec et al.

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