MOS semiconductor device with excellent drain current

Details MOS semiconductor device with excellent drain current MOS semiconductor device with excellent drain current

1996-06-13

1998-11-24

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257345, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058411739

ABSTRACT:
A MOS semiconductor device includes a first conductivity type silicon layer having a main surface; a gate insulating film selectively formed on the main surface of the silicon layer; a gate electrode provided on the gate insulating film; an insulating side wall formed on the side of the gate electrode; and source/drain regions formed in the silicon layer. The source/drain regions include a first diffusion layer of second conductivity type formed in the silicon layer; a second diffusion layer of second conductivity type formed in the silicon layer on the outside of the first diffusion layer and having a PN-junction depth larger than that of the first diffusion layer; and the MOS semiconductor device further includes a conductive layer covering at least part of the first diffusion layer and at least part of the second diffusion layer.

REFERENCES:
patent: 4821085 (1989-04-01), Haken et al.
patent: 5068696 (1991-11-01), Yang et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5113234 (1992-05-01), Furuta et al.
patent: 5341028 (1994-08-01), Yamaguchi et al.
patent: 5635746 (1997-06-01), Kimura et al.
T. Yoshitomi et al., "Silicided Silicon-Sidewall Source and Drain (S.sup.4 D) Structure for High-Performance 75-nm Gate Length pMOSFETs", 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 11-12 (1995).
T. Shibata, et al., "An Optimally Designed Process for Submicrometer MOSFET's", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, pp. 531-535 (1982).

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