Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-08-02
2000-11-07
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438213, 438153, H01L 2100, H01L 2184, H01L 218238
Patent
active
061435929
ABSTRACT:
There is provided a semiconductor device including a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a gate insulating layer sandwiched between the gate electrode and the semiconductor substrate, an interlayer insulating layer formed over the gate electrode and the semiconductor substrate, and a hydroxyl (OH) group trapper formed in the interlayer insulating layer. For instance, the hydroxyl group trapper is constituted of a nitrogen containing oxide layer. The semiconductor device is capable of preventing moisture contained in the interlayer insulating layer from penetrating the gate insulating layer and source/drain regions formed in the semiconductor substrate, resulting in that the semiconductor device can be kept away from being degraded because of hot carriers, even if the gate insulating layer were formed thinner.
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patent: 5525550 (1996-06-01), Kato
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5793110 (1998-08-01), Yamaha et al.
Katsuyuki Machida, et al., "Improvement of Water-Related Hot-Carrier Reliability by Using ECR Plasma S10.sub.2," IEEE Transactions on Electron Devices, vol. 41, pp. 709-714, May 1994.
NEC Corporation
Park James
Wilczewski Mary
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