MOS power transistor

Details MOS power transistor MOS power transistor

2005-04-12

2005-04-12

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S357000, C257S371000

Reexamination Certificate

active

06878996

ABSTRACT:
An integrated MOS power transistors, in particular a lateral PMOS power transistor and a lateral n-DMOS power transistor, in which the bulk node is disposed in a manner spatially isolated from the source electrode zone. The particular integration structure of the MOS power transistor avoids a parasitic drain-bulk diode, a parasitic body diode and a substrate diode and thereby achieves an area-saving protection against over-currents in the event of reverse voltage polarity between drain and source.

REFERENCES:
patent: 5581103 (1996-12-01), Mizukami
patent: 6245607 (2001-06-01), Tang et al.
patent: 6489653 (2002-12-01), Watanabe et al.
patent: 6747318 (2004-06-01), Kapre et al.

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