Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-20
2009-11-03
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S063000, C257S065000, C257S190000, C257S192000, C257SE29104, C257SE29193, C257SE31035, C257SE33009
Reexamination Certificate
active
07612364
ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a stressor having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the stressor comprises an impurity of a first conductivity type; and a portion of the semiconductor substrate adjoining the stressor and on an opposite side of the stressor from the gate stack, wherein the portion of the semiconductor substrate is doped with an impurity of the first conductivity type.
REFERENCES:
patent: 6124627 (2000-09-01), Rodder et al.
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6794713 (2004-09-01), Mizushima et al.
patent: 7226820 (2007-06-01), Zhang et al.
patent: 7253067 (2007-08-01), Abe
patent: 7381604 (2008-06-01), Lin et al.
patent: 2005/0184345 (2005-08-01), Lin et al.
patent: 2006/0289856 (2006-12-01), Shimamune et al.
patent: 2007/0001162 (2007-01-01), Orlowski et al.
patent: 2007/0020864 (2007-01-01), Chong et al.
patent: 2007/0173022 (2007-07-01), Wang et al.
patent: 1725506 (2006-01-01), None
Chuang Harry
Sun Yuan-Chen
Thei Kong-Beng
Huynh Andy
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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