Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257SE21431, C438S300000
Reexamination Certificate
active
07989901
ABSTRACT:
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
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Chang Chung Li
Chang Yu-En Percy
Cheng Chi-Feng
Hsu Wei-Hua
Hung Win
Naraghi Ali
Slater & Matsil L.L.P.
Such Matthew W
Taiwan Semiconductor Manufacturing Company , Ltd.
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