Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2009-02-24
Pizarro, Marcos D. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S344000, C257SE23103
Reexamination Certificate
active
07495280
ABSTRACT:
A MOS device having corner spacers and a method for forming the same are provided. The method includes forming a gate structure overlying a substrate, forming a first dielectric layer over the gate structure and the substrate, forming a second dielectric layer on the first dielectric layer, forming a third dielectric layer on the second dielectric layer, and etching the first, the second and the third dielectric layers using the third dielectric layer as a mask. The remaining first and second dielectric layers have an L-shape. The method further includes implanting source/drain regions, removing remaining portions of the third dielectric layer, blanket forming a fourth dielectric layer, etching the fourth dielectric layer, siliciding exposed source/drain regions, and forming a contact etch stop layer. The remaining portion of the fourth dielectric layer forms corner spacers.
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Augendre, E., et al., “Thin L-shaped spacers for CMOS devices,” IEEE, 2003, pp. 219-222.
Anya Igwe U.
Pizarro Marcos D.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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