MOS Depletion load circuit

Static information storage and retrieval – Read/write circuit – Precharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307296R, 307304, 307574, H03K 17687, G11C 700

Patent

active

045162255

ABSTRACT:
A depletion load element for connection between a supply line V.sub.CC and a node 10 includes an enhancement mode field effect transistor 12 having a source 14 connected to the node 10, a gate 15 connected to the supply line, and a drain 25 connected to a second node; and a depletion mode field effect transistor 20 having a drain 21 connected to the supply line V.sub.CC and having a source 23 connected to the second node. The gate 22 is connected to one of the first or second nodes.

REFERENCES:
patent: 3950654 (1976-04-01), Broedner et al.
patent: 4048524 (1977-09-01), Laugesen et al.
patent: 4199693 (1980-04-01), Bennett
patent: 4239980 (1980-12-01), Takanashi et al.
patent: 4250408 (1981-02-01), Spence
patent: 4321489 (1982-03-01), Higuchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS Depletion load circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS Depletion load circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS Depletion load circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1803714

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.