MOS composite type semiconductor device

Details MOS composite type semiconductor device MOS composite type semiconductor device

1995-05-30

1996-07-23

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257785, 257151, 257181, 257178, 257765, 257727, 257401, H01L 2910, H01L 2978, H01L 2348

Patent

active

055392326

ABSTRACT:
A plurality of segments of small-sized IGBT devices are arranged concentrically in a plurality of rows in a pellet substrate. Each segment has an independent polysilicon gate electrode layer. A gate electrode terminal lead-out portion is provided at a central portion of the pellet substrate. A metal gate electrode layer electrically connects the polysilicon gate electrode layer of at least one of the segments of a unit, which unit is constituted by at least one of the segments arranged radially from the central portion of the pellet substrate towards a peripheral portion of the pellet substrate, to the gate electrode terminal lead-out portion. The metal gate electrode layer includes a trunk wiring portion extending radially from the gate electrode terminal lead-out portion, and a branch wiring portion extending from the trunk wiring portion in a circumferential direction of the pellet substrate and electrically connected to the polysilicon gate electrode layer of each segment. The polysilicon gate electrode layer is rectangular, and the branch wiring portion is connected to the polysilicon gate electrode layer along three peripheral sides of the polysilicon gate electrode layer. The pellet substrate is clamped under pressure between an emitter pressure-contact plate and a collector pressure-contact plate.

REFERENCES:
patent: 5324971 (1994-06-01), Notley
patent: 5376815 (1994-12-01), Yokota et al.

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