Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-06-12
2008-08-26
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S570000, C257SE21054, C257SE21450, C257SE21403
Reexamination Certificate
active
07416929
ABSTRACT:
A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
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Mazzola Michael S.
Merrett Joseph N.
Geyer Scott B.
Mississippi State University
Morris Manning & Martin LLP
Raimund Christopher W.
SemiSouth Laboratories, Inc.
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