Monitoring of contact hole production

Details Monitoring of contact hole production Monitoring of contact hole production

2006-07-18

2006-07-18

Lee, John R. (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

C324S754120

Reexamination Certificate

active

07078690

ABSTRACT:
A method for production testing includes receiving a wafer including a semiconductor substrate and a non-conducting layer formed over the substrate, following etching of contact openings through the non-conducting layer to the substrate, the contact openings including an array of the contact openings arranged in a predefined test pattern in a test area on the wafer. An electron beam is directed to irradiate the test area, a specimen current flowing through the substrate responsive to the electron beam is measured. The specimen current is analyzed so as to assess a dimension of the contact openings.

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patent: 2002/0070738 (2002-06-01), Yamada et al.
Yacobi, et al., Microanalysis of Solids, 1994 Plenum Press, New York, Chapters 1, 2 & 4.
Yamada, et al.,An In-Line Contact And Via Hole Inspection Method Using Electron Beam Compensation Current,IEEE, 1999.
Model EKF-1000, Omicron Nanotechnology GmbH, Taunusstein, Germany. Available at: http://www.omicron.de/products/ekf1000, 2002.
PCT Written Opinion, “International Preliminary Examining Authority”, PCT/US03/03494, (Jan. 27, 2005),7 pgs.

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