Molecular beam deposition technique using gaseous sources of gro

Details Molecular beam deposition technique using gaseous sources of gro Molecular beam deposition technique using gaseous sources of gro

1980-07-21

1982-05-18

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, 156DIG103, 422245, 427 86, 118716, 118725, C30B 2306

Patent

active

043303609

ABSTRACT:
The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M.sub.2 or M.sub.4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As.sub.2 and P.sub.2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

REFERENCES:
patent: 4220488 (1980-09-01), Duchemin et al.
Cho and Authur, "Molecular Beam Epitaxy", published in Progress in Solid State Chem., vol. 10, pp. 157-191, Oct. 1975.
Morris and Fukui, "A New GaAs Vacuum Deposition Technique", published in J. of Vac. Sci. Technol., vol. #11, Mar. 1974, pp. 506-510.
Casey, Jr., et al., "Application of MBE Layers to Heterostructure Lasers", published in IEEE J. of Quantum Elect., Jul. 1975, pp. 467-470.

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