Modulating surface morphology of barrier layers

Details Modulating surface morphology of barrier layers Modulating surface morphology of barrier layers

1996-06-20

1999-09-21

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438640, 438653, 438714, 438906, H01L 2128, H01L 21306

Patent

active

059566086

ABSTRACT:
A process for fabricating electronic devices which includes the steps of providing a structure that includes a substrate with an overlying dielectric layer having one or more contact holes and/or vias formed therein; depositing a barrier layer over the structure so that the barrier layer penetrates into the contact holes and/or vias; plasma etching the deposited barrier layer so as to modify its surface morphology; and after modifying the surface morphology of the deposited barrier layer, depositing a metalization layer over the barrier layer. A two-step preclean to facet upper corners of the holes and/or vias and to clean bottoms of the holes and/or vias is performed prior to the deposition of the barrier layer.

REFERENCES:
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5320981 (1994-06-01), Blalock
patent: 5460689 (1995-10-01), Raaijmakers et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5658829 (1997-08-01), Mathews et al.
Park, et al., "Fabrication of 256Mbit Dram With a Fully Planarized Double Level Interconnection," VMIC Conference, pp. 45-51 (Jun. 27-29, 1995).

Affiliated with

Also associated with

Rating

Modulating surface morphology of barrier layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Modulating surface morphology of barrier layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modulating surface morphology of barrier layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-90962