Modifier for low dielectric constant film, and method for...

Details Modifier for low dielectric constant film, and method for... Modifier for low dielectric constant film, and method for...

2011-07-05

2011-07-05

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257SE21242, C438S787000, C438S781000, C438S790000

Reexamination Certificate

active

07973390

ABSTRACT:
A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1)in-line-formulae description="In-line Formulae" end="lead"?R3-nHnSiN3  (1)in-line-formulae description="In-line Formulae" end="tail"?in which R is a C1-C4 alkyl group, and n is an integer from 0 to 3.

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Korean Office Action dated Mar. 4, 2011.

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